I am not proposing to do anything more with the RAM control signals just yet. We will come back to them in due time. I just want to checkout the basic TTL decoding logic first to maximise the use of the NOP generator in one go.
I am not sure what Z75 has to do with the ROM CS though... Is what you are saying that replacing Z75 has made the two (2) /CS lines on the ROMs that were a bit low (voltage levels on the $Axxx and $Bxxx ROMs) now much better?
We are now going to move over to Z75 (and the surrounding logic anyhow)...
If you look at the inputs to Z75, you will observe that the /RAMCS and each of the /ROM chip selects feed into Z75.
Set the ROM and RAM select switches all to OPEN, and check that the inputs to Z75 on pins 7 down to 5 (in the graphic below) are all HIGH.
Put your oscilloscope probe 1 on Z61 pin 17 ($Fxxx). This line should be normally HIGH and pulsing LOW as we have seen previously. We will use this as our trigger.
Use your oscilloscope probe 2 to look at Z44 pins 9, 10 and 11 in turn. You should observe mainly HIGH signals but pulsing LOW. The LOW activity should be within the period of time that the channel 1 signal is LOW.
Put your oscilloscope probe 2 on Z45 pin 6. This signal should be normally LOW and pulse HIGH during the channel 1 window. This signal is called DISROM. Part of the $Fxxxx ROM is disabled to allow access to the I/O devices. We are checking that this logic is working correctly.
If you now move oscilloscope probe 2 over to Z80 pin 8 you should observe that this signal should go LOW when the $Fxxx ROM is selected, but go HIGH when the ROM should be disabled to allow CPU access to the I/O ports.
If this looks OK, we can check out Z75 next.
Dave